Intel NVM Reliability R&D Engineer in Albuquerque, New Mexico
In this position, you will be working as a member of the Non-Volatile Memory (NVM) Solutions Group's (NSG's) Technology Development Quality and Reliability team, helping to develop Intel's new 3DXPointTM technologies and related system products, focusing on NVM reliability. Your responsibilities will include but not limited to:
� Determining reliability requirements and technology targets of components and systems to achieve company, customer and other reliability objectives;
� Designing and executing experiments to identify, segment, characterize and model NVM reliability mechanisms;
� Developing empirical and physics-based predictive reliability modeling methods and tools for reliability risk assessments;
� Developing new acceleration techniques, test methods and analytical tools to provide fast and effective feedback for reliability process optimization;
� Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies and exploration of novel memory cells;
� Developing the appropriate process- and product-qualification stress methods and criteria;
� You may be expected to lead small cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues- such as, during technology development and ramp to high-volume manufacturing.
You must possess the minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates. Relevant experience can be obtained through school work, classes and project work, internships, military training, and/ or work experience. This is an entry level position and will be compensated accordingly.
The candidate must possess a Master or Ph.D. degree in Electrical Engineering
Minimum 6 months of experience in the following:
� Basic solid understanding of semiconductor device physics, materials science, probability and statistics, circuit design, semiconductor processing, and quantum physics
� programming (C or C++, PERL or Python)
� Experimental design, execution, analysis, interpretation and synthesis
� Experience with a range of analytical lab test equipment such as Logic analyzer/oscilloscopes, semiconductor parametric analyzer (CV-IV), memory testers, SEM/TEM/IREM.
� Experience in non-volatile memories, especially product or reliability
� Experience with reliability failure statistics, physics, or failure mechanisms.
� CMOS transistor level circuit design, semiconductor device physics, memory reliability, interconnect reliability, computer or digital systems, or board level design.
� Semiconductor fabrication process, packaging assembly, and/or board system technology operation
� Experience with statistical analysis packages (e.g. R, JMP or Minitab)
Inside this Business Group
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
US, California, Folsom
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....