Intel Analog Engineer in Folsom, California

Job Description

You will be a member of the Non-volatile memory Solutions Group working on NAND memory products as an Analog/Mixed-signal/IO Design engineer. Your responsibilities will include (but are not limited to): NAND Custom & IO circuit design, validation, reliability analysis, timing/chip-planning, layout interaction, extraction and co-optimization. Top level analog system design and integration, intensive analog, IO and mixed-signal validation and debug. Process, device, template evaluation, and characterization. Understand and lead methodology development. The additional responsibilities include the post-silicon electrical validation, Signal Integrity/PD work and interacting with system hardware board teams, post silicon debug, and high volume manufacturing support in the circuit. You will also be responsible for interfacing with cross functional teams (technology, architecture, product engineering etc..) and maybe leading small teams during different phases of product development in addition to owning design tasks. Cross team interface skills along with good written and oral communication skills are very important.

Qualifications

  • Minimum of 7+ years Analog and/or High-Speed IO circuit design industry experience (academia and/or work experience) with a BSEE or related degree. Candidates with a Masters and 5+ years, or candidates with a PhD in related field will also be considered.

  • Experience with Flash-cell/Semiconductor device physics, transistor level analog/mixed signal & I/O datapath circuit design

Preferred/Desired Experience:

  • MS or PhD in Electrical Engineering (EE/ECE) with 15+ years of Analog & High-speed IO circuit design industry experience

  • Experience through multiple product cycles from definition to design to pre/post-silicon validation to product qualification.

  • 2D or 3D NAND or PCM non-volatile memory design experience with strong fundamentals in Flash-cell/Semiconductor device physics, transistor level analog/mixed signal & I/O datapath circuit design.

  • Experience with NAND/DRAM High-speed I/O interface blocks like Transmitter/Receiver/DLL/SerDes and extensive knowledge of entire NAND memory datapath

  • Experience with circuit design, layout, circuit reliability tools & methodologies.

  • Experience managing/leading small design teams and products.

  • ESD design/verification and signal Integrity Analysis experience/expertise

  • Experience working with cross functional teams (product engineering, technology, spec development, architecture).

  • Experience with scripting languages (ex. PERL, Awk, Python, TCL)

Inside this Business Group

Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.

Posting Statement

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance....