Intel CMOS Reliability R and D Engineer in Folsom, California
In this position, you will be working as a member of the Non-Volatile Memory NVM Solutions Group's NSG's Technology Development Quality and Reliability team, helping to develop Intel's new emerging NVM technologies such as 3D NAND, 3D XPointTM,, and SSD products, focusing on CMOS transistor reliability. You may be expected to lead small cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues- such as, during technology development and ramp to high-volume manufacturing. You may also be expected to supervise a small team of engineers and/or technicians.
Your responsibilities will include but not limited to:
Characterizing CMOS device and interconnect FEOL and BEOL reliability
Developing transistor aging models aiming to ensure proactive product design for high reliability
Determining reliability requirements and technology targets of components to achieve company, customer, and other reliability objectives
Developing empirical and physics-based predictive reliability modeling methods and tools for reliability risk assessments
Developing new acceleration techniques, test methods, and analytical tools to provide fast and effective feedback for process, product and test optimization on reliability issues
Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies
Developing the appropriate process- and product-qualification stress methods and criteria
Demonstrated leadership to assume the authority, energize teams and advocate for new ideas
Ability to work in a fast-paced dynamic environment
Demonstrated persistence and commitment to achieving results
Ability to clearly communicate achieved results and to influence wide range of audiences
Ability to work well in a team setting with people from a wide range of backgrounds
Ability to understand the high level picture and apply systems thinking to generate solutions
Ph.D. degree in Electrical Engineering, Physics, Materials Science, or Computer Engineering.
Solid understanding of semiconductor device physics, materials science, probability and statistics, circuit design, semiconductor processing, and quantum physics
2+ years of work experience relevant to CMOS device and interconnect FEOL and BEOL reliability
3+ years of experience in CMOS transistor reliability physics (TDDB, HCI, NBTI, PBTI), intermetal dielectric reliability and EM
3+ years of experience in reliability aging models and simulation for circuit reliability assessments
3+ years of experience in transistor device modeling, characterization and parameter extraction such as BSIM
3+ years of experience with reliability failure statistics, physics, or reliability failure mechanisms
3+ years of experience with test equipment such as semiconductor parametric analyzer CV-IV, pulse generators, oscilloscopes, etc. for electrical characterization of electronic materials and devices
3+ years of experience of computer programming for testing, and data acquisition, reduction and analysis C or C++, Perl, Python, LabVIEW
3+ years of experience with statistical analysis packages e.g. R, JMP or Minitab
Knowledge of semiconductor fabrication process, CMOS transistor level circuit design, packaging assembly, test and/or board/system level technology operation
Inside this Business Group
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
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