Intel Memory Design Engineer in Hillsboro, Oregon
Come join the Silicon Engineering Group - and build a better tomorrow. Intel is in the midst of an exciting transformation, with a vision to create and extend computing technology to connect and enrich the lives of every person on Earth.
We are looking for a Designer to own portions of our SRAM memory designs for various advanced technology nodes (14 nm and 10 nm).
Job duties may include but not be limited to:
Conduct spice level simulation
Complete RTL writing and functional validation
Conduct floorplan, place and route, synthesis flows and static timing analysis
Conduct formal verification flows and power optimization
BS or MS degree in Electrical, Computer, or Electrical & Computer Engineering
3+ years of experience in memory design and technology development, including SRAM, ROM, and/or RF Memory Design
3+ years of experience in process integration, transistor and back end flows and design rules
Experience with variation modeling and Vmin characterization of SRAM memory designs
Prior experiecne with advanced technology nodes (14nm and 10nm)
Experience using industry standard tools for schematic capture, circuit simulation, static timing analysis and layout design using Synopsys and Cadence tolos
Design automation skills
Good software knowledge
Prior experience with Unix and one or multiple programming languages (such as Python, Perl, orTcl)
Inside this Business Group
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.