Intel Design Rule - DFM Engineer in Santa Clara, California
Non-Volatile Memory Device and Integration engineers are responsible for leading research and development in order to architect, develop and deliver leading edge nonvolatile memory technologies to high volume manufacturing. They contribute to defining process and device architectures, technology collaterals as well as develop scaling paths for leading edge memory technologies. The scope includes development of new types of process and device architectures involving novel materials, structures and integration schemes to deliver industry leadership in density, performance, reliability and cost. They collaborate with technology development partners in defining goals, developing the vision, aligning strategy and driving fast paced silicon development to meet aggressive technology node cadences. In addition they work closely with the product and system teams to ensure seamless integration of the memory components into Intel's system products as well as with the manufacturing fabs to ensure a seamless technology transfer and ramp to support the full envelope of component and system products
The device integration engineer will be responsible for CMOS transistor development, optimization, and usage in high-speed memory technologies to extend Intel's lead in NVM performance, cost, and quality. The individual will work effectively with diverse stakeholders such as design, product, integration, yield enhancement and process engineering groups to resolve CMOS device related issues, understand interactions with the memory array, and help in successful transfer to high volume manufacturing. Must be knowledgeable in CMOS device physics, process integration, fabrication and characterization techniques. Direct experience with test structure bench characterization is required. Needs to be able to design experiments and analyze CMOS related parametric/probe data to troubleshoot and optimize product performance and yield. Should be familiar with spice model generation and corner methodology. In this position, communication and influencing skills are required. This position is for a recent college graduate device integration engineer.
Responsibilities may be quite diverse in a technical nature and will vary significantly depending on the unique needs of the role, U.S. experience and education requirements.
This is an entry level position and will be compensated accordingly.
You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates. Experience listed below would be obtained through a combination of your school work/classes/research and/or relevant previous job and/or internship experiences.
The candidate must have a PhD in Electrical Engineering or related science disciplines such as, Physics, Material Science etc.
1 year of experience with Python.
6 months experience working with semiconductors.
1 year of experience with:
CMOS device physics, process integration, fabrication and characterization techniques.
Test structure bench characterization
Inside this Business Group
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.
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