Intel NAND Device Engineer in Santa Clara, California

Job Description

Looking for an Engineer interested in working on 3D NAND Cell/Array engineering.

Primary responsibilities include:

  • Cell and array characterization

  • Data analysis

  • Device simulation / modelling

  • Circuit-simulation and modeling aimed towards the NAND Array meeting complete product requirements meeting system needs

  • Develops solutions to problems utilizing formal education and judgement, by interacting in a cross-functional, cross-site and cross-company environment

Qualifications

Education:

  • Master’s Degree in Electrical Engineering or Physics with 7+ years of relevant industry experience, or PHD in Electrical Engineering or Physics with 3+ years of relevant industry experience

Minimum requirements:

  • Minimum of 8 years of experience in device and array characterization of Flash memory

  • Minimum of 8 years of experience in one of the following programming languages: C, C++, Python, Matlab

  • Minimum of 5 years of experience in semiconductor processing

Preferred Requirements:

  • 10+ years in industry working with Semiconductor and Device Physics, device processing, electrical characterization, and device and circuit models

  • 10+ years in industry working in technical problem solving and multicultural teams

Inside this Business Group

Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.

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